Quantum sensing technology has reached a new frontier with the development of a 2D quantum sensing chip using hexagonal boron nitride (hBN). This groundbreaking advancement allows for the simultaneous detection of temperature anomalies and magnetic fields in any direction, revolutionizing the field of thin-film quantum sensors.
Traditionally, quantum sensing chips have been made from diamond due to its robust nature. However, diamond-based sensors face limitations in detecting magnetic fields when unaligned, resulting in large blind spots. This necessitates the use of multiple sensors at varying alignment degrees, making operation more complex and limiting their versatility in different applications.
Researchers at TMOS and RMIT University have pioneered a new quantum sensing platform using hBN crystals, which consist of atomically thick sheets that are flexible. This flexibility allows the sensing chips to conform to the shape of the sample being studied, enabling closer proximity to the sample than diamond-based sensors. The unique defects in hBN, including a carbon-based defect with an unidentified atomic structure, offer new possibilities for detecting magnetic fields in any direction.
Through Rabi measurement experiments and comparisons with well-understood defects in hBN, the research team discovered that the new carbon-based defect behaves as a spin half system. This half spin nature enables the sensor to detect magnetic fields in any direction, opening up new possibilities for quantum sensing technology. The team also found that this defect could be controlled through electrical excitation and interact with other defects, paving the way for more versatile sensor devices.
The use of hBN as a quantum sensing material offers numerous advantages over diamond, including its 2D form factor that allows sensors to get closer to the sample. Additionally, hBN can operate as a quantum light source for communications at room temperature, making it more accessible and cost-effective than diamond, which often requires cryogenic cooling. These advancements make hBN a promising candidate for future quantum sensing applications.
The potential applications of this new quantum sensing technology are vast, ranging from in-field identification of magnetic geological features to radio spectroscopy across a wider band. The extreme anisotropy of low-dimensional materials like hBN opens up opportunities for discovering new physics and optimizing sensor devices for optimal performance. As researchers continue to explore the properties and opportunities of this new optical spin defect, the potential for further advancements in quantum sensing technology is limitless.
The development of 2D quantum sensing chips using hBN represents a significant advancement in the field of quantum technology. The unique properties of hBN, coupled with the discovery of new spin defects, offer exciting possibilities for the future of quantum sensing. With ongoing research and innovation, the potential for transformative applications of this technology is boundless.
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